APA (7th ed.) Citation

Cashwell Jr., I. K., Thomas, D. A., Skuza, J. R., & Pradhan, A. K. (2024). Electronic Properties of Atomic Layer Deposited HfO 2 Thin Films on InGaAs Compared to HfO 2 /GaAs Semiconductors. Crystals (2073-4352), 14(9), 753. https://doi.org/10.3390/cryst14090753

Chicago Style (17th ed.) Citation

Cashwell Jr., Irving K., Donovan A. Thomas, Jonathan R. Skuza, and Aswini K. Pradhan. "Electronic Properties of Atomic Layer Deposited HfO 2 Thin Films on InGaAs Compared to HfO 2 /GaAs Semiconductors." Crystals (2073-4352) 14, no. 9 (2024): 753. https://doi.org/10.3390/cryst14090753.

MLA (9th ed.) Citation

Cashwell Jr., Irving K., et al. "Electronic Properties of Atomic Layer Deposited HfO 2 Thin Films on InGaAs Compared to HfO 2 /GaAs Semiconductors." Crystals (2073-4352), vol. 14, no. 9, 2024, p. 753, https://doi.org/10.3390/cryst14090753.