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Electronic Properties of Atomic Layer Deposited HfO 2 Thin Films on InGaAs Compared to HfO 2 /GaAs Semiconductors.

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Bibliographic Details
Title: Electronic Properties of Atomic Layer Deposited HfO 2 Thin Films on InGaAs Compared to HfO 2 /GaAs Semiconductors.
Authors: Cashwell Jr., Irving K.1, Thomas, Donovan A.2, Skuza, Jonathan R.3, jskuza@emich.edu, Pradhan, Aswini K.4, aswini.pradhan@hamptonu.edu
Source: Crystals (2073-4352); Sep2024, Vol. 14 Issue 9, p753, 10p
Database: Applied Science & Technology Source
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ISSN:20734352
DOI:10.3390/cryst14090753