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Electronic Properties of Atomic Layer Deposited HfO 2 Thin Films on InGaAs Compared to HfO 2 /GaAs Semiconductors.

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Title: Electronic Properties of Atomic Layer Deposited HfO 2 Thin Films on InGaAs Compared to HfO 2 /GaAs Semiconductors.
Authors: Cashwell Jr., Irving K.1, Thomas, Donovan A.2, Skuza, Jonathan R.3, jskuza@emich.edu, Pradhan, Aswini K.4, aswini.pradhan@hamptonu.edu
Source: Crystals (2073-4352); Sep2024, Vol. 14 Issue 9, p753, 10p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 180015754
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Electronic Properties of Atomic Layer Deposited HfO 2 Thin Films on InGaAs Compared to HfO 2 /GaAs Semiconductors.
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=180015754
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      – Type: doi
        Value: 10.3390/cryst14090753
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      – Code: eng
        Text: English
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      – TitleFull: Electronic Properties of Atomic Layer Deposited HfO 2 Thin Films on InGaAs Compared to HfO 2 /GaAs Semiconductors.
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            NameFull: Thomas, Donovan A.
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            NameFull: Skuza, Jonathan R.
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              Text: Sep2024
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              Y: 2024
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              Value: 14
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