Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN high‐electron‐mobility transistors for X‐band applications. - Chang, Sung‐Jae; Jeong, Hyeon‐Seok; Jung, Hyun‐Wook; Choi, Su‐Min; Choi, Il‐Gyu; Noh, Youn‐Sub; Kim, Seong‐Il; Lee, Sang‐Heung; Ahn, Ho‐Kyun; Kang, Dong Min; Kim, Dae‐Hyun; Lim, Jong‐Won (ETRI Journal, 2024)