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Engineered Amorphous Indium Oxide Thin-Film Transistors for Electrical Performance Enhancement by Focused Oxygen Plasma Treatment: Engineered Amorphous Indium Oxide Thin-Film Transistors for Electrical Performance Enhancement by Focused Oxygen Plasma Treatment: H.-L. Zhao and S.-J. Kim

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Title: Engineered Amorphous Indium Oxide Thin-Film Transistors for Electrical Performance Enhancement by Focused Oxygen Plasma Treatment: Engineered Amorphous Indium Oxide Thin-Film Transistors for Electrical Performance Enhancement by Focused Oxygen Plasma Treatment: H.-L. Zhao and S.-J. Kim
Authors: Zhao, Han-Lin1, Kim, Sung-Jin1,2, ksj@cbnu.ac.kr
Source: Journal of Electronic Materials; Jan2025, Vol. 54 Issue 1, p800-808, 9p
Database: Applied Science & Technology Source
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Header DbId: aci
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An: 181826256
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  Data: Engineered Amorphous Indium Oxide Thin-Film Transistors for Electrical Performance Enhancement by Focused Oxygen Plasma Treatment: Engineered Amorphous Indium Oxide Thin-Film Transistors for Electrical Performance Enhancement by Focused Oxygen Plasma Treatment: H.-L. Zhao and S.-J. Kim
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  Data: <searchLink fieldCode="AU" term="%22Zhao%2C+Han-Lin%22">Zhao, Han-Lin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Kim%2C+Sung-Jin%22">Kim, Sung-Jin</searchLink><relatesTo>1,2</relatesTo>, <i>ksj@cbnu.ac.kr</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; Jan2025, Vol. 54 Issue 1, p800-808, 9p
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      – Type: doi
        Value: 10.1007/s11664-024-11597-6
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      – Code: eng
        Text: English
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        PageCount: 9
        StartPage: 800
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      – TitleFull: Engineered Amorphous Indium Oxide Thin-Film Transistors for Electrical Performance Enhancement by Focused Oxygen Plasma Treatment: Engineered Amorphous Indium Oxide Thin-Film Transistors for Electrical Performance Enhancement by Focused Oxygen Plasma Treatment: H.-L. Zhao and S.-J. Kim
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            NameFull: Zhao, Han-Lin
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            NameFull: Kim, Sung-Jin
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            – D: 01
              M: 01
              Text: Jan2025
              Type: published
              Y: 2025
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              Value: 54
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