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Band alignment in Zn(1−x)MgxO:Al/SiOx/Si heterostructures for photovoltaic applications realized by atomic layer deposition: Effects of Al doping and Mg alloying.

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Title: Band alignment in Zn(1−x)MgxO:Al/SiOx/Si heterostructures for photovoltaic applications realized by atomic layer deposition: Effects of Al doping and Mg alloying.
Authors: Schifano, R.1, schifano@ifpan.edu.pl, Gieraltowska, S.1, Kurek, J.1,2,3, Wachnicki, L.1, Rehman, U.1, Budiakivska, D.1,2, Chusnutdinow, S.1, Kopalko, K.1, Porro, S.4, Jakiela, R.1, Minikayev, R.1, Witkowski, B. S.1, Pawlowski, M.2, Jastrzebski, C.2, Thøgersen, A.5
Source: Journal of Applied Physics; 12/28/2024, Vol. 136 Issue 24, p1-17, 17p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 181909321
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; 12/28/2024, Vol. 136 Issue 24, p1-17, 17p
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        Value: 10.1063/5.0241865
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