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Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated InAlGaN/GaN MIS-HEMTs Using ZrO2 Seed Layers: Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated...: Tien-Han Yu et al

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Title: Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated InAlGaN/GaN MIS-HEMTs Using ZrO2 Seed Layers: Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated...: Tien-Han Yu et al
Authors: Yu, Tien-Han1, Chen, Yu-Lin1, Tsao, Yi-Fan2, Hsu, Chin-Tsai3, Lu, Tsan-Feng4, Hsu, Heng-Tung1, hthsu@nycu.edu.tw
Source: Journal of Electronic Materials; Feb2025, Vol. 54 Issue 2, p1096-1103, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 182077562
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated InAlGaN/GaN MIS-HEMTs Using ZrO2 Seed Layers: Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated...: Tien-Han Yu et al
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  Data: <searchLink fieldCode="AU" term="%22Yu%2C+Tien-Han%22">Yu, Tien-Han</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chen%2C+Yu-Lin%22">Chen, Yu-Lin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Tsao%2C+Yi-Fan%22">Tsao, Yi-Fan</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Hsu%2C+Chin-Tsai%22">Hsu, Chin-Tsai</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Lu%2C+Tsan-Feng%22">Lu, Tsan-Feng</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AU" term="%22Hsu%2C+Heng-Tung%22">Hsu, Heng-Tung</searchLink><relatesTo>1</relatesTo>, <i>hthsu@nycu.edu.tw</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; Feb2025, Vol. 54 Issue 2, p1096-1103, 8p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=182077562
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      – Type: doi
        Value: 10.1007/s11664-024-11600-0
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 1096
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      – TitleFull: Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated InAlGaN/GaN MIS-HEMTs Using ZrO2 Seed Layers: Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated...: Tien-Han Yu et al
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            NameFull: Yu, Tien-Han
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            NameFull: Chen, Yu-Lin
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            NameFull: Hsu, Chin-Tsai
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            NameFull: Lu, Tsan-Feng
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            – D: 01
              M: 02
              Text: Feb2025
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              Y: 2025
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