View in EDS HTML Full Text PDF Full Text

Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity.

Saved in:
Bibliographic Details
Title: Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity.
Authors: Murugapandiyan, P.1, murugavlsi@gmail.com, Revathy, A.2, Ramkumar, N.3, Kumar, R. Saravana4, Mohanbabu, A.5
Source: Journal of Electronic Materials; Mar2025, Vol. 54 Issue 3, p2340-2354, 15p
Database: Applied Science & Technology Source
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 182841994
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Murugapandiyan%2C+P%2E%22">Murugapandiyan, P.</searchLink><relatesTo>1</relatesTo>, <i>murugavlsi@gmail.com</i><br /><searchLink fieldCode="AU" term="%22Revathy%2C+A%2E%22">Revathy, A.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Ramkumar%2C+N%2E%22">Ramkumar, N.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Kumar%2C+R%2E+Saravana%22">Kumar, R. Saravana</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AU" term="%22Mohanbabu%2C+A%2E%22">Mohanbabu, A.</searchLink><relatesTo>5</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; Mar2025, Vol. 54 Issue 3, p2340-2354, 15p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=182841994
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s11664-024-11664-y
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 15
        StartPage: 2340
    Titles:
      – TitleFull: Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Murugapandiyan, P.
      – PersonEntity:
          Name:
            NameFull: Revathy, A.
      – PersonEntity:
          Name:
            NameFull: Ramkumar, N.
      – PersonEntity:
          Name:
            NameFull: Kumar, R. Saravana
      – PersonEntity:
          Name:
            NameFull: Mohanbabu, A.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 03
              Text: Mar2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 03615235
          Numbering:
            – Type: volume
              Value: 54
            – Type: issue
              Value: 3
          Titles:
            – TitleFull: Journal of Electronic Materials
              Type: main
ResultId 1