Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity. - Murugapandiyan, P.; Revathy, A.; Ramkumar, N.; Kumar, R. Saravana; Mohanbabu, A. (Journal of Electronic Materials, 2025)