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Carrier Activation at End-of-Range (EOR) Defects and Grain Boundaries in Boron-Doped Silicon.

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Bibliographic Details
Title:	Carrier Activation at End-of-Range (EOR) Defects and Grain Boundaries in Boron-Doped Silicon.
Authors:	Li, Yi-Yao¹, Yang, Yu-Chen², Chou, Tung-Huan², Huang, Yu-Lin², Chang, Chia-He², Hsu, Ya-Lan², Lin, Kun-Lin², kllin@narlabs.org.tw
Source:	Journal of Electronic Materials; Mar2025, Vol. 54 Issue 3, p2211-2218, 8p
Database:	Applied Science & Technology Source
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Description
ISSN:	03615235
DOI:	10.1007/s11664-024-11725-2