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Carrier Activation at End-of-Range (EOR) Defects and Grain Boundaries in Boron-Doped Silicon.

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Title: Carrier Activation at End-of-Range (EOR) Defects and Grain Boundaries in Boron-Doped Silicon.
Authors: Li, Yi-Yao1, Yang, Yu-Chen2, Chou, Tung-Huan2, Huang, Yu-Lin2, Chang, Chia-He2, Hsu, Ya-Lan2, Lin, Kun-Lin2, kllin@narlabs.org.tw
Source: Journal of Electronic Materials; Mar2025, Vol. 54 Issue 3, p2211-2218, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 182842037
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Carrier Activation at End-of-Range (EOR) Defects and Grain Boundaries in Boron-Doped Silicon.
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        Value: 10.1007/s11664-024-11725-2
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        Text: English
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      – TitleFull: Carrier Activation at End-of-Range (EOR) Defects and Grain Boundaries in Boron-Doped Silicon.
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              Text: Mar2025
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              Y: 2025
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