APA (7th ed.) Citation

Kim, M. S., Lee, S. H., Park, J., Bae, S. J., Hong, J. W., Koh, W. S., . . . Kang, I. M. (2025). Novel three-dimensional stacked capacitorless DRAM architecture using partially etched nanosheets for high-density memory applications. Discover Nano, 20(1), 1. https://doi.org/10.1186/s11671-025-04201-1

Chicago Style (17th ed.) Citation

Kim, Min Seok, et al. "Novel Three-dimensional Stacked Capacitorless DRAM Architecture Using Partially Etched Nanosheets for High-density Memory Applications." Discover Nano 20, no. 1 (2025): 1. https://doi.org/10.1186/s11671-025-04201-1.

MLA (9th ed.) Citation

Kim, Min Seok, et al. "Novel Three-dimensional Stacked Capacitorless DRAM Architecture Using Partially Etched Nanosheets for High-density Memory Applications." Discover Nano, vol. 20, no. 1, 2025, p. 1, https://doi.org/10.1186/s11671-025-04201-1.