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Novel three-dimensional stacked capacitorless DRAM architecture using partially etched nanosheets for high-density memory applications.

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Title: Novel three-dimensional stacked capacitorless DRAM architecture using partially etched nanosheets for high-density memory applications.
Authors: Kim, Min Seok1, Lee, Sang Ho1, Park, Jin1, Bae, Seung Ji1, Hong, Jeong Woo1, Koh, Won Suk1, Yun, Gang San1, Jang, Jaewon1, Bae, Jin-Hyuk1, Kang, In Man1, imkang@ee.knu.ac.kr
Source: Discover Nano; 2/10/2025, Vol. 20 Issue 1, p1-11, 11p
Database: Applied Science & Technology Source
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Header DbId: aci
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An: 182956792
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  Data: <searchLink fieldCode="JN" term="%22Discover+Nano%22">Discover Nano</searchLink>; 2/10/2025, Vol. 20 Issue 1, p1-11, 11p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=182956792
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        Value: 10.1186/s11671-025-04201-1
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              Text: 2/10/2025
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