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Electronic threshold switching of As-embedded SiO2 selectors: charged oxygen vacancy model.

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Title: Electronic threshold switching of As-embedded SiO2 selectors: charged oxygen vacancy model.
Authors: Kim, Hye Rim1, Seok, Tae Jun1, Ha, Tae Jung2, Song, Jeong Hwan2, Dae, Kyun Seong3, Lee, Sang Gil3, Choi, Hyun Seung1, Park, Su Yong1, Choi, Byung Joon4, Jang, Jae Hyuck3, Kim, Soo Gil2, soogil.kim@sk.com, Park, Tae Joo1, tjp@hanyang.ac.kr
Source: Nano Convergence; 3/4/2025, Vol. 12 Issue 1, p1-11, 11p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 183433979
AccessLevel: 2
PubType: Academic Journal
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  Data: Electronic threshold switching of As-embedded SiO2 selectors: charged oxygen vacancy model.
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        Value: 10.1186/s40580-025-00480-7
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              Text: 3/4/2025
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