APA (7th ed.) Citation

Aswini, K., Munirathnam, K., Manjunath, V., Reddy, N. N. K., Alhammadi, S., Kumar, K. S., . . . Dastagiri, S. (2025). Enhanced microstructure and electrical performance of a cost-effective Ni/Cu/n-GaN Schottky diode with a V2O5 interlayer for optoelectronic applications. Journal of Materials Science: Materials in Electronics, 36(7), 1. https://doi.org/10.1007/s10854-025-14466-y

Chicago Style (17th ed.) Citation

Aswini, Karri, et al. "Enhanced Microstructure and Electrical Performance of a Cost-effective Ni/Cu/n-GaN Schottky Diode with a V2O5 Interlayer for Optoelectronic Applications." Journal of Materials Science: Materials in Electronics 36, no. 7 (2025): 1. https://doi.org/10.1007/s10854-025-14466-y.

MLA (9th ed.) Citation

Aswini, Karri, et al. "Enhanced Microstructure and Electrical Performance of a Cost-effective Ni/Cu/n-GaN Schottky Diode with a V2O5 Interlayer for Optoelectronic Applications." Journal of Materials Science: Materials in Electronics, vol. 36, no. 7, 2025, p. 1, https://doi.org/10.1007/s10854-025-14466-y.