Enhanced microstructure and electrical performance of a cost-effective Ni/Cu/n-GaN Schottky diode with a V2O5 interlayer for optoelectronic applications.
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| Title: | Enhanced microstructure and electrical performance of a cost-effective Ni/Cu/n-GaN Schottky diode with a V2O5 interlayer for optoelectronic applications. |
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| Authors: | Aswini, Karri1, Munirathnam, K.1, mail2rathnam@gmail.com, Manjunath, V.2, drvmanju18@gmail.com, Reddy, N. Nanda Kumar3, Alhammadi, Salh4, Kumar, Koppala Siva5, Golkonda, Srinivas Reddy6, Minnam Reddy, Vasudeva Reddy4,7, drmvasudr9@gmail.com, Kim, Woo Kyoung4, wkim@ynu.ac.kr, Ranjith, R.1, Amina, Musarat8, mamina@ksu.edu.sa, Dastagiri, S.9 |
| Source: | Journal of Materials Science: Materials in Electronics; Mar2025, Vol. 36 Issue 7, p1-20, 20p |
| Database: | Applied Science & Technology Source |
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| ISSN: | 09574522 |
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| DOI: | 10.1007/s10854-025-14466-y |
