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Nonvolatile Organic Floating-Gate Memory Using N2200 as Charge-Trapping Layer.

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Bibliographic Details
Title:	Nonvolatile Organic Floating-Gate Memory Using N2200 as Charge-Trapping Layer.
Authors:	Zhang, Wenting¹, zwt13104@mail.lzjtu.cn, Shang, Junliang¹, Li, Shuang¹, Liu, Hu¹, Ma, Mengqi¹, Ma, Dongping¹
Source:	Applied Sciences (2076-3417); Mar2025, Vol. 15 Issue 5, p2278, 13p
Database:	Applied Science & Technology Source
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Description
ISSN:	20763417
DOI:	10.3390/app15052278