APA (7th ed.) Citation

Fu, Y., Song, S., Ren, Z., Zhu, L., Zhang, J., Su, K., . . . Zhang, J. (2025). Preparation and Characterization of GaN-on-Si HEMTs with Nanocrystalline Diamond Passivation. Crystals (2073-4352), 15(3), 242. https://doi.org/10.3390/cryst15030242

Chicago Style (17th ed.) Citation

Fu, Yu, et al. "Preparation and Characterization of GaN-on-Si HEMTs with Nanocrystalline Diamond Passivation." Crystals (2073-4352) 15, no. 3 (2025): 242. https://doi.org/10.3390/cryst15030242.

MLA (9th ed.) Citation

Fu, Yu, et al. "Preparation and Characterization of GaN-on-Si HEMTs with Nanocrystalline Diamond Passivation." Crystals (2073-4352), vol. 15, no. 3, 2025, p. 242, https://doi.org/10.3390/cryst15030242.