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Preparation and Characterization of GaN-on-Si HEMTs with Nanocrystalline Diamond Passivation.

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Title: Preparation and Characterization of GaN-on-Si HEMTs with Nanocrystalline Diamond Passivation.
Authors: Fu, Yu1, Song, Songyuan1,2, Ren, Zeyang1,2,3, Zhu, Liaoliang1,2, Zhang, Jinfeng1,2, Su, Kai1,3, Chen, Junfei1,2, Zhang, Tao1, Zhu, Weidong1, Li, Junpeng2, Man, Weidong3, Hao, Yue1, Zhang, Jincheng1
Source: Crystals (2073-4352); Mar2025, Vol. 15 Issue 3, p242, 11p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 184104059
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  Data: Preparation and Characterization of GaN-on-Si HEMTs with Nanocrystalline Diamond Passivation.
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        Value: 10.3390/cryst15030242
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              M: 03
              Text: Mar2025
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              Y: 2025
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