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Electrically Active Defects in 3C, 4H, and 6H Silicon Carbide Polytypes: A Review.

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Bibliographic Details
Title:	Electrically Active Defects in 3C, 4H, and 6H Silicon Carbide Polytypes: A Review.
Authors:	Capan, Ivana¹
Source:	Crystals (2073-4352); Mar2025, Vol. 15 Issue 3, p255, 20p
Database:	Applied Science & Technology Source
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Description
ISSN:	20734352
DOI:	10.3390/cryst15030255