APA (7th ed.) Citation

Lee, H., Islam, M. M., Bae, J., Jeong, M., Roy, S., Lim, T., . . . Jang, J. (2025). A Coplanar Crystalline InGaO Thin Film Transistor with SiO2 Gate Insulator on ZrO2 Ferroelectric Layer: A New Ferroelectric TFT Structure. Advanced Materials Technologies, 10(7), 1. https://doi.org/10.1002/admt.202401075

Chicago Style (17th ed.) Citation

Lee, Heonbang, Md Mobaidul Islam, Jinbaek Bae, Myeonggi Jeong, Samiran Roy, Taebin Lim, Md Hasnat Rabbi, and Jin Jang. "A Coplanar Crystalline InGaO Thin Film Transistor with SiO2 Gate Insulator on ZrO2 Ferroelectric Layer: A New Ferroelectric TFT Structure." Advanced Materials Technologies 10, no. 7 (2025): 1. https://doi.org/10.1002/admt.202401075.

MLA (9th ed.) Citation

Lee, Heonbang, et al. "A Coplanar Crystalline InGaO Thin Film Transistor with SiO2 Gate Insulator on ZrO2 Ferroelectric Layer: A New Ferroelectric TFT Structure." Advanced Materials Technologies, vol. 10, no. 7, 2025, p. 1, https://doi.org/10.1002/admt.202401075.