APA (7th ed.) Citation

Chowdhury, D., DasMahapatra, S., De, B. P., Maiti, M., Kar, R., Mandal, D., & Samanta, J. (2025). Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: D. Chowdhury et al. Journal of Electronic Materials, 54(5), 3480. https://doi.org/10.1007/s11664-024-11548-1

Chicago Style (17th ed.) Citation

Chowdhury, Dibyendu, Suddhendu DasMahapatra, Bishnu Prasad De, Madhusudan Maiti, Rajib Kar, Durbadal Mandal, and Jagannath Samanta. "Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: D. Chowdhury Et Al." Journal of Electronic Materials 54, no. 5 (2025): 3480. https://doi.org/10.1007/s11664-024-11548-1.

MLA (9th ed.) Citation

Chowdhury, Dibyendu, et al. "Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: D. Chowdhury Et Al." Journal of Electronic Materials, vol. 54, no. 5, 2025, p. 3480, https://doi.org/10.1007/s11664-024-11548-1.