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Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: D. Chowdhury et al

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Title: Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: D. Chowdhury et al
Authors: Chowdhury, Dibyendu1, DasMahapatra, Suddhendu2, suddhendu.mahapatra@jaipur.manipal.edu, De, Bishnu Prasad3, bishnu.ece@gmail.com, Maiti, Madhusudan4, Kar, Rajib5, Mandal, Durbadal5, Samanta, Jagannath1
Source: Journal of Electronic Materials; May2025, Vol. 54 Issue 5, p3480-3493, 14p
Database: Applied Science & Technology Source
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ISSN:03615235
DOI:10.1007/s11664-024-11548-1