View in EDS HTML Full Text PDF Full Text

Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: D. Chowdhury et al

Saved in:
Bibliographic Details
Title: Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: D. Chowdhury et al
Authors: Chowdhury, Dibyendu1, DasMahapatra, Suddhendu2, suddhendu.mahapatra@jaipur.manipal.edu, De, Bishnu Prasad3, bishnu.ece@gmail.com, Maiti, Madhusudan4, Kar, Rajib5, Mandal, Durbadal5, Samanta, Jagannath1
Source: Journal of Electronic Materials; May2025, Vol. 54 Issue 5, p3480-3493, 14p
Database: Applied Science & Technology Source
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 184385947
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: D. Chowdhury et al
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Chowdhury%2C+Dibyendu%22">Chowdhury, Dibyendu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22DasMahapatra%2C+Suddhendu%22">DasMahapatra, Suddhendu</searchLink><relatesTo>2</relatesTo>, <i>suddhendu.mahapatra@jaipur.manipal.edu</i><br /><searchLink fieldCode="AU" term="%22De%2C+Bishnu+Prasad%22">De, Bishnu Prasad</searchLink><relatesTo>3</relatesTo>, <i>bishnu.ece@gmail.com</i><br /><searchLink fieldCode="AU" term="%22Maiti%2C+Madhusudan%22">Maiti, Madhusudan</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AU" term="%22Kar%2C+Rajib%22">Kar, Rajib</searchLink><relatesTo>5</relatesTo><br /><searchLink fieldCode="AU" term="%22Mandal%2C+Durbadal%22">Mandal, Durbadal</searchLink><relatesTo>5</relatesTo><br /><searchLink fieldCode="AU" term="%22Samanta%2C+Jagannath%22">Samanta, Jagannath</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; May2025, Vol. 54 Issue 5, p3480-3493, 14p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=184385947
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s11664-024-11548-1
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 14
        StartPage: 3480
    Titles:
      – TitleFull: Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: D. Chowdhury et al
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Chowdhury, Dibyendu
      – PersonEntity:
          Name:
            NameFull: DasMahapatra, Suddhendu
      – PersonEntity:
          Name:
            NameFull: De, Bishnu Prasad
      – PersonEntity:
          Name:
            NameFull: Maiti, Madhusudan
      – PersonEntity:
          Name:
            NameFull: Kar, Rajib
      – PersonEntity:
          Name:
            NameFull: Mandal, Durbadal
      – PersonEntity:
          Name:
            NameFull: Samanta, Jagannath
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 05
              Text: May2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 03615235
          Numbering:
            – Type: volume
              Value: 54
            – Type: issue
              Value: 5
          Titles:
            – TitleFull: Journal of Electronic Materials
              Type: main
ResultId 1