Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: D. Chowdhury et al - Chowdhury, Dibyendu; DasMahapatra, Suddhendu; De, Bishnu Prasad; Maiti, Madhusudan; Kar, Rajib; Mandal, Durbadal; Samanta, Jagannath (Journal of Electronic Materials, 2025)