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Correction to: Enhanced microstructure and electrical performance of a cost-effective Ni/Cu/n-GaN Schottky diode with a V2O5 interlayer for optoelectronic applications.

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Title: Correction to: Enhanced microstructure and electrical performance of a cost-effective Ni/Cu/n-GaN Schottky diode with a V2O5 interlayer for optoelectronic applications.
Authors: Aswini, Karri1, Munirathnam, K.1, mail2rathnam@gmail.com, Manjunath, V.2, drvmanju18@gmail.com, Reddy, N. Nanda Kumar3, Alhammadi, Salh4, Kumar, Koppala Siva5, Golkonda, Srinivas Reddy6, Minnam Reddy, Vasudeva Reddy4,7, drmvasudr9@gmail.com, Kim, Woo Kyoung4, wkim@ynu.ac.kr, Ranjith, R.1, Amina, Musarat8, mamina@ksu.edu.sa, Dastagiri, S.9
Source: Journal of Materials Science: Materials in Electronics; Apr2025, Vol. 36 Issue 10, p1-2, 2p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 184614491
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  Data: Correction to: Enhanced microstructure and electrical performance of a cost-effective Ni/Cu/n-GaN Schottky diode with a V2O5 interlayer for optoelectronic applications.
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  Data: <searchLink fieldCode="AU" term="%22Aswini%2C+Karri%22">Aswini, Karri</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Munirathnam%2C+K%2E%22">Munirathnam, K.</searchLink><relatesTo>1</relatesTo>, <i>mail2rathnam@gmail.com</i><br /><searchLink fieldCode="AU" term="%22Manjunath%2C+V%2E%22">Manjunath, V.</searchLink><relatesTo>2</relatesTo>, <i>drvmanju18@gmail.com</i><br /><searchLink fieldCode="AU" term="%22Reddy%2C+N%2E+Nanda+Kumar%22">Reddy, N. Nanda Kumar</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Alhammadi%2C+Salh%22">Alhammadi, Salh</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AU" term="%22Kumar%2C+Koppala+Siva%22">Kumar, Koppala Siva</searchLink><relatesTo>5</relatesTo><br /><searchLink fieldCode="AU" term="%22Golkonda%2C+Srinivas+Reddy%22">Golkonda, Srinivas Reddy</searchLink><relatesTo>6</relatesTo><br /><searchLink fieldCode="AU" term="%22Minnam+Reddy%2C+Vasudeva+Reddy%22">Minnam Reddy, Vasudeva Reddy</searchLink><relatesTo>4,7</relatesTo>, <i>drmvasudr9@gmail.com</i><br /><searchLink fieldCode="AU" term="%22Kim%2C+Woo+Kyoung%22">Kim, Woo Kyoung</searchLink><relatesTo>4</relatesTo>, <i>wkim@ynu.ac.kr</i><br /><searchLink fieldCode="AU" term="%22Ranjith%2C+R%2E%22">Ranjith, R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Amina%2C+Musarat%22">Amina, Musarat</searchLink><relatesTo>8</relatesTo>, <i>mamina@ksu.edu.sa</i><br /><searchLink fieldCode="AU" term="%22Dastagiri%2C+S%2E%22">Dastagiri, S.</searchLink><relatesTo>9</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Apr2025, Vol. 36 Issue 10, p1-2, 2p
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      – Type: doi
        Value: 10.1007/s10854-025-14590-9
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      – Code: eng
        Text: English
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        PageCount: 2
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      – TitleFull: Correction to: Enhanced microstructure and electrical performance of a cost-effective Ni/Cu/n-GaN Schottky diode with a V2O5 interlayer for optoelectronic applications.
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            – D: 01
              M: 04
              Text: Apr2025
              Type: published
              Y: 2025
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