APA (7th ed.) Citation

Hardy, M. T., Lang, A. C., Hart, J. L., Jin, E. N., Nepal, N., Gokhale, V. J., . . . Wheeler, V. D. (2025). Epitaxial Growth of ScAlN on (111) Si Via Molecular Beam Epitaxy. Journal of Electronic Materials, 54(6), 4291. https://doi.org/10.1007/s11664-024-11673-x

Chicago Style (17th ed.) Citation

Hardy, Matthew T., et al. "Epitaxial Growth of ScAlN on (111) Si Via Molecular Beam Epitaxy." Journal of Electronic Materials 54, no. 6 (2025): 4291. https://doi.org/10.1007/s11664-024-11673-x.

MLA (9th ed.) Citation

Hardy, Matthew T., et al. "Epitaxial Growth of ScAlN on (111) Si Via Molecular Beam Epitaxy." Journal of Electronic Materials, vol. 54, no. 6, 2025, p. 4291, https://doi.org/10.1007/s11664-024-11673-x.