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Epitaxial Growth of ScAlN on (111) Si Via Molecular Beam Epitaxy.

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Title: Epitaxial Growth of ScAlN on (111) Si Via Molecular Beam Epitaxy.
Authors: Hardy, Matthew T.1, matthew.t.hardy12.civ@us.navy.mil, Lang, Andrew C.1, Hart, James L.2, Jin, Eric N.1, Nepal, Neeraj1, Gokhale, Vikrant J.1, Downey, Brian P.1, Katzer, D. Scott1, Litwin, Peter M.3, Sales, Maria Gabriela3, Growden, Tyler A.1, Wheeler, Virginia D.1
Source: Journal of Electronic Materials; Jun2025, Vol. 54 Issue 6, p4291-4298, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 185069757
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PubType: Academic Journal
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              Text: Jun2025
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