APA (7th ed.) Citation

Dishman, H. E., Meilander, O. R., & Ebrish, M. A. (2025). Improving p-Type Doping in Gallium Nitride through Magnesium Diffusion. Journal of Electronic Materials, 54(6), 4350. https://doi.org/10.1007/s11664-025-11882-y

Chicago Style (17th ed.) Citation

Dishman, Haley E., Owen R. Meilander, and Mona A. Ebrish. "Improving P-Type Doping in Gallium Nitride Through Magnesium Diffusion." Journal of Electronic Materials 54, no. 6 (2025): 4350. https://doi.org/10.1007/s11664-025-11882-y.

MLA (9th ed.) Citation

Dishman, Haley E., et al. "Improving P-Type Doping in Gallium Nitride Through Magnesium Diffusion." Journal of Electronic Materials, vol. 54, no. 6, 2025, p. 4350, https://doi.org/10.1007/s11664-025-11882-y.