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In situ control of GaN growth rate in nitrogen-limited regime.

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Title: In situ control of GaN growth rate in nitrogen-limited regime.
Authors: Canciani, M.1, Vichi, S.1, stefano.vichi@unimib.it, Koplak, O.1, Bietti, S.1, Sanguinetti, S.1
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; May2025, Vol. 43 Issue 3, p1-6, 6p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 185107605
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=185107605
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1116/6.0004437
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      – Code: eng
        Text: English
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        PageCount: 6
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      – TitleFull: In situ control of GaN growth rate in nitrogen-limited regime.
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            NameFull: Canciani, M.
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            NameFull: Vichi, S.
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            NameFull: Koplak, O.
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            NameFull: Bietti, S.
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            – D: 01
              M: 05
              Text: May2025
              Type: published
              Y: 2025
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              Value: 07342101
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              Value: 43
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            – TitleFull: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films
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