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In situ control of GaN growth rate in nitrogen-limited regime.

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Bibliographic Details
Title: In situ control of GaN growth rate in nitrogen-limited regime.
Authors: Canciani, M.1, Vichi, S.1, stefano.vichi@unimib.it, Koplak, O.1, Bietti, S.1, Sanguinetti, S.1
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; May2025, Vol. 43 Issue 3, p1-6, 6p
Database: Applied Science & Technology Source
Description
ISSN:07342101
DOI:10.1116/6.0004437