APA (7th ed.) Citation

Reddy, M. S., Soujanya, P., Ghosh, N., Paul, S., & Deb, D. (2025). Defect induced magnetoresistance in P-Si/NiFe2O4/Alq3/Al organic spintronics devices. Journal of Materials Science: Materials in Electronics, 36(18), 1. https://doi.org/10.1007/s10854-025-15184-1

Chicago Style (17th ed.) Citation

Reddy, Meeniga Srikanth, Pamulapati Soujanya, Nitish Ghosh, Subhadip Paul, and Debajit Deb. "Defect Induced Magnetoresistance in P-Si/NiFe2O4/Alq3/Al Organic Spintronics Devices." Journal of Materials Science: Materials in Electronics 36, no. 18 (2025): 1. https://doi.org/10.1007/s10854-025-15184-1.

MLA (9th ed.) Citation

Reddy, Meeniga Srikanth, et al. "Defect Induced Magnetoresistance in P-Si/NiFe2O4/Alq3/Al Organic Spintronics Devices." Journal of Materials Science: Materials in Electronics, vol. 36, no. 18, 2025, p. 1, https://doi.org/10.1007/s10854-025-15184-1.