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Defect induced magnetoresistance in P-Si/NiFe2O4/Alq3/Al organic spintronics devices.

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Title: Defect induced magnetoresistance in P-Si/NiFe2O4/Alq3/Al organic spintronics devices.
Authors: Reddy, Meeniga Srikanth1, sreekanthreddy4944@gmail.com, Soujanya, Pamulapati1, p.soujanya90@gmail.com, Ghosh, Nitish2, nitishphy91@gmail.com, Paul, Subhadip2, spaul74242@gmail.com, Deb, Debajit1, debajitdeb12pec018@gmail.com
Source: Journal of Materials Science: Materials in Electronics; Jun2025, Vol. 36 Issue 18, p1-10, 10p
Database: Applied Science & Technology Source
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Header DbId: aci
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An: 186271550
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  Data: Defect induced magnetoresistance in P-Si/NiFe2O4/Alq3/Al organic spintronics devices.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Jun2025, Vol. 36 Issue 18, p1-10, 10p
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        Value: 10.1007/s10854-025-15184-1
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      – Code: eng
        Text: English
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        PageCount: 10
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      – TitleFull: Defect induced magnetoresistance in P-Si/NiFe2O4/Alq3/Al organic spintronics devices.
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            NameFull: Reddy, Meeniga Srikanth
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            NameFull: Soujanya, Pamulapati
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            NameFull: Ghosh, Nitish
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            NameFull: Deb, Debajit
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            – D: 21
              M: 06
              Text: Jun2025
              Type: published
              Y: 2025
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              Value: 36
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            – TitleFull: Journal of Materials Science: Materials in Electronics
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