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Defect induced magnetoresistance in P-Si/NiFe2O4/Alq3/Al organic spintronics devices.

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Bibliographic Details
Title: Defect induced magnetoresistance in P-Si/NiFe2O4/Alq3/Al organic spintronics devices.
Authors: Reddy, Meeniga Srikanth1, sreekanthreddy4944@gmail.com, Soujanya, Pamulapati1, p.soujanya90@gmail.com, Ghosh, Nitish2, nitishphy91@gmail.com, Paul, Subhadip2, spaul74242@gmail.com, Deb, Debajit1, debajitdeb12pec018@gmail.com
Source: Journal of Materials Science: Materials in Electronics; Jun2025, Vol. 36 Issue 18, p1-10, 10p
Database: Applied Science & Technology Source
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ISSN:09574522
DOI:10.1007/s10854-025-15184-1