APA (7th ed.) Citation

Venkatesh, R., Sharma, A., Bhooshanam, N. N., Revathi, K., Verma, A., Vinayagam, M., . . . Alharbi, S. A. (2025). Featuring of Formamidinium lead halide and enrichment of optoelectronic behaviour of SnO2/FAPbI3/NiOx with PCBM layer. Journal of Materials Science: Materials in Electronics, 36(18), 1. https://doi.org/10.1007/s10854-025-15203-1

Chicago Style (17th ed.) Citation

Venkatesh, Rathinavelu, Aman Sharma, N Naga Bhooshanam, K. Revathi, Apurv Verma, Mohanavel Vinayagam, Manzoore Elahi M. Soudagar, Sami Al Obaid, and Sulaiman Ali Alharbi. "Featuring of Formamidinium Lead Halide and Enrichment of Optoelectronic Behaviour of SnO2/FAPbI3/NiOx with PCBM Layer." Journal of Materials Science: Materials in Electronics 36, no. 18 (2025): 1. https://doi.org/10.1007/s10854-025-15203-1.

MLA (9th ed.) Citation

Venkatesh, Rathinavelu, et al. "Featuring of Formamidinium Lead Halide and Enrichment of Optoelectronic Behaviour of SnO2/FAPbI3/NiOx with PCBM Layer." Journal of Materials Science: Materials in Electronics, vol. 36, no. 18, 2025, p. 1, https://doi.org/10.1007/s10854-025-15203-1.