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High Thermal Conductive Ga2O3 MOSFET with Diamond Substrate and its Simulation Analysis.

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Title: High Thermal Conductive Ga2O3 MOSFET with Diamond Substrate and its Simulation Analysis.
Authors: Liu, Duo1, Guan, He1, he.guan@nwpu.edu.cn, Tang, YongChuan1, Wang, Ying1
Source: Journal of Electronic Materials; Aug2025, Vol. 54 Issue 8, p6802-6811, 10p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 186470095
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: High Thermal Conductive Ga2O3 MOSFET with Diamond Substrate and its Simulation Analysis.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Liu%2C+Duo%22">Liu, Duo</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Guan%2C+He%22">Guan, He</searchLink><relatesTo>1</relatesTo>, <i>he.guan@nwpu.edu.cn</i><br /><searchLink fieldCode="AU" term="%22Tang%2C+YongChuan%22">Tang, YongChuan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Ying%22">Wang, Ying</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; Aug2025, Vol. 54 Issue 8, p6802-6811, 10p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=186470095
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s11664-025-11965-w
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 10
        StartPage: 6802
    Titles:
      – TitleFull: High Thermal Conductive Ga2O3 MOSFET with Diamond Substrate and its Simulation Analysis.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Liu, Duo
      – PersonEntity:
          Name:
            NameFull: Guan, He
      – PersonEntity:
          Name:
            NameFull: Tang, YongChuan
      – PersonEntity:
          Name:
            NameFull: Wang, Ying
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 08
              Text: Aug2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 03615235
          Numbering:
            – Type: volume
              Value: 54
            – Type: issue
              Value: 8
          Titles:
            – TitleFull: Journal of Electronic Materials
              Type: main
ResultId 1