Research on High-Threshold-Voltage InAlN/GaN HEMTs with p-GaN Caps and Trench Gates with InGaN Buried Layers.
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| Title: | Research on High-Threshold-Voltage InAlN/GaN HEMTs with p-GaN Caps and Trench Gates with InGaN Buried Layers. |
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| Authors: | Chen, Yi-Fei1, Cai, Li-E1, 2011111001@xmut.edu.cn, Niu, Kai1, Ma, Zhi-Yu1, Chen, Zhi-Chao1, Liu, Xiang-Yu1, Sun, Chuan-Tao1, Sun, Dong1, Lin, Hai-Feng1, Xiong, Fei-Bing1 |
| Source: | Journal of Electronic Materials; Aug2025, Vol. 54 Issue 8, p6847-6857, 11p |
| Database: | Applied Science & Technology Source |
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| FullText | Links: – Type: pdflink Text: Availability: 1 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 186470100 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Research on High-Threshold-Voltage InAlN/GaN HEMTs with p-GaN Caps and Trench Gates with InGaN Buried Layers. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Chen%2C+Yi-Fei%22">Chen, Yi-Fei</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Cai%2C+Li-E%22">Cai, Li-E</searchLink><relatesTo>1</relatesTo>, <i>2011111001@xmut.edu.cn</i><br /><searchLink fieldCode="AU" term="%22Niu%2C+Kai%22">Niu, Kai</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Ma%2C+Zhi-Yu%22">Ma, Zhi-Yu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chen%2C+Zhi-Chao%22">Chen, Zhi-Chao</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Liu%2C+Xiang-Yu%22">Liu, Xiang-Yu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Sun%2C+Chuan-Tao%22">Sun, Chuan-Tao</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Sun%2C+Dong%22">Sun, Dong</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Lin%2C+Hai-Feng%22">Lin, Hai-Feng</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Xiong%2C+Fei-Bing%22">Xiong, Fei-Bing</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; Aug2025, Vol. 54 Issue 8, p6847-6857, 11p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=186470100 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s11664-025-12010-6 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 11 StartPage: 6847 Titles: – TitleFull: Research on High-Threshold-Voltage InAlN/GaN HEMTs with p-GaN Caps and Trench Gates with InGaN Buried Layers. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Chen, Yi-Fei – PersonEntity: Name: NameFull: Cai, Li-E – PersonEntity: Name: NameFull: Niu, Kai – PersonEntity: Name: NameFull: Ma, Zhi-Yu – PersonEntity: Name: NameFull: Chen, Zhi-Chao – PersonEntity: Name: NameFull: Liu, Xiang-Yu – PersonEntity: Name: NameFull: Sun, Chuan-Tao – PersonEntity: Name: NameFull: Sun, Dong – PersonEntity: Name: NameFull: Lin, Hai-Feng – PersonEntity: Name: NameFull: Xiong, Fei-Bing IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 08 Text: Aug2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 03615235 Numbering: – Type: volume Value: 54 – Type: issue Value: 8 Titles: – TitleFull: Journal of Electronic Materials Type: main |
| ResultId | 1 |
