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Graphene Nanoribbon Based Asymmetric Tunnel FET for Fast Switching and Low Power Applications.

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Bibliographic Details
Title: Graphene Nanoribbon Based Asymmetric Tunnel FET for Fast Switching and Low Power Applications.
Authors: Dutta, R.1, ritamdutta1986@gmail.com, Das, D.2, De, R.3, deranjit@handong.edu
Source: Journal of Nano- & Electronic Physics; 2025, Vol. 17 Issue 3, p03014-1-03014-5, 5p
Database: Applied Science & Technology Source
Description
ISSN:20776772
DOI:10.21272/jnep.17(3).03014