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Low-voltage programming of RRAM-based crossbar arrays using MOS parasitic diodes.

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Bibliographic Details
Title: Low-voltage programming of RRAM-based crossbar arrays using MOS parasitic diodes.
Authors: Maheshwari, Sachin1, maheshwari.sachin@ed.ac.uk, Serb, Alex1, Prodromakis, Themis1
Source: Frontiers in Nanotechnology (2673-3013); 2025, p1-12, 12p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 186750904
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Low-voltage programming of RRAM-based crossbar arrays using MOS parasitic diodes.
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  Data: <searchLink fieldCode="AU" term="%22Maheshwari%2C+Sachin%22">Maheshwari, Sachin</searchLink><relatesTo>1</relatesTo>, <i>maheshwari.sachin@ed.ac.uk</i><br /><searchLink fieldCode="AU" term="%22Serb%2C+Alex%22">Serb, Alex</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Prodromakis%2C+Themis%22">Prodromakis, Themis</searchLink><relatesTo>1</relatesTo>
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.3389/fnano.2025.1587700
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 12
        StartPage: 1
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      – TitleFull: Low-voltage programming of RRAM-based crossbar arrays using MOS parasitic diodes.
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            NameFull: Maheshwari, Sachin
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            NameFull: Serb, Alex
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            NameFull: Prodromakis, Themis
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            – D: 18
              M: 07
              Text: 2025
              Type: published
              Y: 2025
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            – TitleFull: Frontiers in Nanotechnology (2673-3013)
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