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P‐1.33: The Novel Temperature and Voltage Sensors Achieved by High‐mobility Oxide TFT.

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Title: P‐1.33: The Novel Temperature and Voltage Sensors Achieved by High‐mobility Oxide TFT.
Authors: Dong, Yuhua1, Ge, Shimin1,2, Cai, Zhihui1, Yuan, Dong1, Yu, Mingjiue1, Pan, Zikang1, Li, Shan1, Xiao, Juncheng1
Source: SID Symposium Digest of Technical Papers; Jun2025 Supplement 1, Vol. 56, p811-814, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 186835927
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="JN" term="%22SID+Symposium+Digest+of+Technical+Papers%22">SID Symposium Digest of Technical Papers</searchLink>; Jun2025 Supplement 1, Vol. 56, p811-814, 4p
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      – Type: doi
        Value: 10.1002/sdtp.18938
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 811
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      – TitleFull: P‐1.33: The Novel Temperature and Voltage Sensors Achieved by High‐mobility Oxide TFT.
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            NameFull: Dong, Yuhua
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            – D: 02
              M: 06
              Text: Jun2025 Supplement 1
              Type: published
              Y: 2025
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