APA (7th ed.) Citation

Chouksey, A., Lal, M., Kumar, S., Kumar, P., Laishram, R., Singh, A., . . . Khare, N. (2025). Si/HfO2/graphene heterostructure for efficient all-electrical THz modulator. Journal of Materials Science: Materials in Electronics, 36(22), 1. https://doi.org/10.1007/s10854-025-15472-w

Chicago Style (17th ed.) Citation

Chouksey, Abhilasha, Mohan Lal, Shivnath Kumar, Prashant Kumar, Radhapiyari Laishram, Anupama Singh, J. S. Rawat, and Neeraj Khare. "Si/HfO2/graphene Heterostructure for Efficient All-electrical THz Modulator." Journal of Materials Science: Materials in Electronics 36, no. 22 (2025): 1. https://doi.org/10.1007/s10854-025-15472-w.

MLA (9th ed.) Citation

Chouksey, Abhilasha, et al. "Si/HfO2/graphene Heterostructure for Efficient All-electrical THz Modulator." Journal of Materials Science: Materials in Electronics, vol. 36, no. 22, 2025, p. 1, https://doi.org/10.1007/s10854-025-15472-w.