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26‐4: Late‐News Paper: A Bottom‐Up InGaN Technology for Ultra‐High Brightness R,G,B‐Emitting MicroLEDs.

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Title: 26‐4: Late‐News Paper: A Bottom‐Up InGaN Technology for Ultra‐High Brightness R,G,B‐Emitting MicroLEDs.
Authors: Björk, Mikael T.1, Heurlin, Magnus1, Berg, Martin1, Yilmaz, Ibrahim1, Menon, Heera1, Bi, Zhaoxia1, Samuelson, Lars1
Source: SID Symposium Digest of Technical Papers; Jun2025, Vol. 56 Issue 1, p339-341, 3p
Database: Applied Science & Technology Source
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  Data: 26‐4: Late‐News Paper: A Bottom‐Up InGaN Technology for Ultra‐High Brightness R,G,B‐Emitting MicroLEDs.
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=187391480
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      – Type: doi
        Value: 10.1002/sdtp.18161
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        Text: English
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      – TitleFull: 26‐4: Late‐News Paper: A Bottom‐Up InGaN Technology for Ultra‐High Brightness R,G,B‐Emitting MicroLEDs.
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              Text: Jun2025
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              Y: 2025
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