Exploring the performance of GaN trench CAVETs from cryogenic to elevated temperatures.

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Title: Exploring the performance of GaN trench CAVETs from cryogenic to elevated temperatures.
Authors: Wen, X.1, Lee, K.1, Kasai, H.1,2, Noshin, M.1, Meng, C.1, Chowdhury, S.1, srabanti@stanford.edu
Source: Frontiers in Electronics; 2025, p1-9, 9p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 187559121
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Exploring the performance of GaN trench CAVETs from cryogenic to elevated temperatures.
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=187559121
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      – Type: doi
        Value: 10.3389/felec.2025.1613402
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      – Code: eng
        Text: English
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        PageCount: 9
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            NameFull: Wen, X.
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            NameFull: Lee, K.
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            NameFull: Kasai, H.
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            NameFull: Noshin, M.
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            NameFull: Meng, C.
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              Text: 2025
              Type: published
              Y: 2025
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