Assessment of ion-sensitivity of Si3N4 based feedback field effect transistor using snap-back characteristics.
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| Title: | Assessment of ion-sensitivity of Si3N4 based feedback field effect transistor using snap-back characteristics. |
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| Authors: | Kumar, Prateek1, Kumar, Naveen2, naveen.kumar@glasgow.ac.uk, Dixit, Ankit2, Ansari, Md Hasan Raza3, Bagga, Navjeet4, Gandhi, Navneet5, Kondekar, P.N.5, García, César Pascual6, Georgiev, Vihar2 |
| Source: | Solid-State Electronics; Nov2025, Vol. 229, pN.PAG-N.PAG, 1p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00381101 |
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| DOI: | 10.1016/j.sse.2025.109159 |
