APA (7th ed.) Citation

Umana-Membreno, G. A., Kala, H., Gu, R., Mukherji, P. N., Morley, D. J. B., Akhavan, N. D., . . . Faraone, L. (2025). HgCdTe Avalanche Photodiodes by Plasma-Induced p-to-n Type Conversion for 2-μm Wavelength Applications. Journal of Electronic Materials, 54(10), 8363. https://doi.org/10.1007/s11664-025-12280-0

Chicago Style (17th ed.) Citation

Umana-Membreno, G. A., H. Kala, R. Gu, P. N. Mukherji, D. J. B. Morley, N. D. Akhavan, J. Antoszewski, and L. Faraone. "HgCdTe Avalanche Photodiodes by Plasma-Induced P-to-n Type Conversion for 2-μm Wavelength Applications." Journal of Electronic Materials 54, no. 10 (2025): 8363. https://doi.org/10.1007/s11664-025-12280-0.

MLA (9th ed.) Citation

Umana-Membreno, G. A., et al. "HgCdTe Avalanche Photodiodes by Plasma-Induced P-to-n Type Conversion for 2-μm Wavelength Applications." Journal of Electronic Materials, vol. 54, no. 10, 2025, p. 8363, https://doi.org/10.1007/s11664-025-12280-0.