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Pronounced visible luminescence in GaN by high-temperature anion implantation.

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Title: Pronounced visible luminescence in GaN by high-temperature anion implantation.
Authors: Waseem, Aadil1, Wu, Xihang1, Chan, Clarence2, Liu, Yujie3, Ren, Zhongjie1, Ye, Zhengwei4, Kioupakis, Emmanouil3, Mi, Zetian4, Li, Xiuling1,2, xiuling.li@utexas.edu
Source: Applied Physics Letters; 9/1/2025, Vol. 127 Issue 9, p1-9, 9p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 188101784
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Pronounced visible luminescence in GaN by high-temperature anion implantation.
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=188101784
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      – Type: doi
        Value: 10.1063/5.0256317
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      – Code: eng
        Text: English
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        PageCount: 9
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      – TitleFull: Pronounced visible luminescence in GaN by high-temperature anion implantation.
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            NameFull: Wu, Xihang
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              M: 09
              Text: 9/1/2025
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