Homogeneous and Heterogeneous Dual/Double Gate TFETs: Exploring High-k Materials and Thickness Variations.
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| Title: | Homogeneous and Heterogeneous Dual/Double Gate TFETs: Exploring High-k Materials and Thickness Variations. |
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| Authors: | KUMAR, CHINNALA PAVAN1, SIVANI, K.1, SOWJANYA, KOTTE1, RAMBABU, BUSI2, rams1315@gmail.com |
| Source: | Journal of Active & Passive Electronic Devices; 2025, Vol. 19 Issue 1, p1-21, 21p |
| Database: | Applied Science & Technology Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 188146917 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=188146917 |
| RecordInfo | BibRecord: BibEntity: Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 21 StartPage: 1 Titles: – TitleFull: Homogeneous and Heterogeneous Dual/Double Gate TFETs: Exploring High-k Materials and Thickness Variations. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: KUMAR, CHINNALA PAVAN – PersonEntity: Name: NameFull: SIVANI, K. – PersonEntity: Name: NameFull: SOWJANYA, KOTTE – PersonEntity: Name: NameFull: RAMBABU, BUSI IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 07 Text: 2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 15550281 Numbering: – Type: volume Value: 19 – Type: issue Value: 1 Titles: – TitleFull: Journal of Active & Passive Electronic Devices Type: main |
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