APA (7th ed.) Citation

Paul, N., & Chattopadhyay, S. (2025). Understanding the Nanowire Material-Dependent Charge Qubit Performance of Voltage-Tunable Double Quantum Dot Gate Nanowire Channel Field-Effect Transistors (DQD-NWFETs). Journal of Electronic Materials, 54(11), 9511. https://doi.org/10.1007/s11664-025-12059-3

Chicago Style (17th ed.) Citation

Paul, Nilayan, and Sanatan Chattopadhyay. "Understanding the Nanowire Material-Dependent Charge Qubit Performance of Voltage-Tunable Double Quantum Dot Gate Nanowire Channel Field-Effect Transistors (DQD-NWFETs)." Journal of Electronic Materials 54, no. 11 (2025): 9511. https://doi.org/10.1007/s11664-025-12059-3.

MLA (9th ed.) Citation

Paul, Nilayan, and Sanatan Chattopadhyay. "Understanding the Nanowire Material-Dependent Charge Qubit Performance of Voltage-Tunable Double Quantum Dot Gate Nanowire Channel Field-Effect Transistors (DQD-NWFETs)." Journal of Electronic Materials, vol. 54, no. 11, 2025, p. 9511, https://doi.org/10.1007/s11664-025-12059-3.