Understanding the Nanowire Material-Dependent Charge Qubit Performance of Voltage-Tunable Double Quantum Dot Gate Nanowire Channel Field-Effect Transistors (DQD-NWFETs).
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| Title: | Understanding the Nanowire Material-Dependent Charge Qubit Performance of Voltage-Tunable Double Quantum Dot Gate Nanowire Channel Field-Effect Transistors (DQD-NWFETs). |
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| Authors: | Paul, Nilayan1, Chattopadhyay, Sanatan1,2, c_sanatan@yahoo.com |
| Source: | Journal of Electronic Materials; Nov2025, Vol. 54 Issue 11, p9511-9523, 13p |
| Database: | Applied Science & Technology Source |
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| FullText | Links: – Type: pdflink Text: Availability: 1 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 188479242 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Understanding the Nanowire Material-Dependent Charge Qubit Performance of Voltage-Tunable Double Quantum Dot Gate Nanowire Channel Field-Effect Transistors (DQD-NWFETs). – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Paul%2C+Nilayan%22">Paul, Nilayan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chattopadhyay%2C+Sanatan%22">Chattopadhyay, Sanatan</searchLink><relatesTo>1,2</relatesTo>, <i>c_sanatan@yahoo.com</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; Nov2025, Vol. 54 Issue 11, p9511-9523, 13p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=188479242 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s11664-025-12059-3 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 13 StartPage: 9511 Titles: – TitleFull: Understanding the Nanowire Material-Dependent Charge Qubit Performance of Voltage-Tunable Double Quantum Dot Gate Nanowire Channel Field-Effect Transistors (DQD-NWFETs). Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Paul, Nilayan – PersonEntity: Name: NameFull: Chattopadhyay, Sanatan IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 11 Text: Nov2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 03615235 Numbering: – Type: volume Value: 54 – Type: issue Value: 11 Titles: – TitleFull: Journal of Electronic Materials Type: main |
| ResultId | 1 |