Understanding the Nanowire Material-Dependent Charge Qubit Performance of Voltage-Tunable Double Quantum Dot Gate Nanowire Channel Field-Effect Transistors (DQD-NWFETs).

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Title: Understanding the Nanowire Material-Dependent Charge Qubit Performance of Voltage-Tunable Double Quantum Dot Gate Nanowire Channel Field-Effect Transistors (DQD-NWFETs).
Authors: Paul, Nilayan1, Chattopadhyay, Sanatan1,2, c_sanatan@yahoo.com
Source: Journal of Electronic Materials; Nov2025, Vol. 54 Issue 11, p9511-9523, 13p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 188479242
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  Data: Understanding the Nanowire Material-Dependent Charge Qubit Performance of Voltage-Tunable Double Quantum Dot Gate Nanowire Channel Field-Effect Transistors (DQD-NWFETs).
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; Nov2025, Vol. 54 Issue 11, p9511-9523, 13p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=188479242
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1007/s11664-025-12059-3
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      – Code: eng
        Text: English
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        PageCount: 13
        StartPage: 9511
    Titles:
      – TitleFull: Understanding the Nanowire Material-Dependent Charge Qubit Performance of Voltage-Tunable Double Quantum Dot Gate Nanowire Channel Field-Effect Transistors (DQD-NWFETs).
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            NameFull: Paul, Nilayan
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            – D: 01
              M: 11
              Text: Nov2025
              Type: published
              Y: 2025
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