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Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects.

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Title: Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects.
Authors: Abdullayev, Jo'shqin Shakirovich1, j.sh.abdullayev6@gmail.com, Sapaev, Ibroxim Bayramdurdiyevich1,2, sapaevibrokhim@gmail.com, Abdullayev, Jonibek Shakirovich3, j.abdullayev@nuu.uz, Juraev, Davron Aslonqulovich4,5, juraevdavron12@gmail.com, Jalalov, Mahir Jalal6, mahircalalov@mail.ru, Elsayed, Ebrahim E.7, engebrahem16@gmail.com
Source: Journal of Electronic Materials; Nov2025, Vol. 54 Issue 11, p10484-10492, 9p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 188479332
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects.
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=188479332
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        Value: 10.1007/s11664-025-12391-8
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        Text: English
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              M: 11
              Text: Nov2025
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